Multilayer structures LaAlO3/Pt(100) and CeO2(100)/Pt(100) have been grown on Hastelloy C276 by metallorganic chemical vapor deposition. The volatile beta -diketonate Pt(acac)(2) precursor has been used to grow Pt films at 280 degreesC. They are (100) oriented with very smooth and homogeneous surfaces. The second-generation lanthanum and cerium precursors (M(hfa)(3). diglyme) [M = La(III), Ce(III)] have been successfully used for growing LaAlO3 and CeO2 layers on Pt(100). A two-step route has been used for LaAlO3 since there is evidence of severe interdiffusion adopting a one-step, higher temperature approach. [100] oriented CeO2 films can be easily deposited on Pt(100) at 450 degreesC. (C) 2001 The Electrochemical Society.

Fabrication of LaAlO3/Pt(100)/Hastelloy C276 and CeO2(100)/Pt(100)/Hastelloy C276 multilayers by metallorganic chemical vapor deposition

MALANDRINO, Graziella;
2001-01-01

Abstract

Multilayer structures LaAlO3/Pt(100) and CeO2(100)/Pt(100) have been grown on Hastelloy C276 by metallorganic chemical vapor deposition. The volatile beta -diketonate Pt(acac)(2) precursor has been used to grow Pt films at 280 degreesC. They are (100) oriented with very smooth and homogeneous surfaces. The second-generation lanthanum and cerium precursors (M(hfa)(3). diglyme) [M = La(III), Ce(III)] have been successfully used for growing LaAlO3 and CeO2 layers on Pt(100). A two-step route has been used for LaAlO3 since there is evidence of severe interdiffusion adopting a one-step, higher temperature approach. [100] oriented CeO2 films can be easily deposited on Pt(100) at 450 degreesC. (C) 2001 The Electrochemical Society.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/12569
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