A systematic study was carried out on the MOCVD of V-O films using the vanadyl-acetylacetonate [VO(acac)2] precursor. The V-O films were fabricated via low pressure MOCVD on Si (001) substrates. The nature and quality of films were scrutinized depending on relevant operational parameters, namely the deposition temperature, the precursor vaporization rate and finally the flow of the oxygen reacting gas. X-ray diffraction data point to the formation of crystalline film in the range 200-550 °C, with different phases forming within the investigate range going from VO2(B) (200-300°C), to VO2 (M) (350-400 °C), V6O13 (400-500°C) and V2O5 (500-550°C). Outside of this temperature range amorphous phases with different compositions were obtained, i.e. V-O phases and V-Si-O at the lower and higher temperatures, respectively. Field-emission scanning electron microscope (FE-SEM) micrographs indicated very homogeneous surfaces with grain shape and dimensions depending on operational conditions, while energy dispersive X-ray (EDX) analyses pointed to the absence of any C contamination.
|Titolo:||Phase selective route to the V-O film formation: a systematic MOCVD study on the effects of deposition temperature on structure and morphology|
|Autori interni:||MARLETTA, Giovanni|
|Data di pubblicazione:||2015|
|Rivista:||CHEMICAL VAPOR DEPOSITION|
|Appare nelle tipologie:||1.1 Articolo in rivista|