We report here a detailed study about the formation and self-organization of nanoscale structures during ion beam implantation at room temperature of 300 keV Ge+ in Ge as a function of the ion fluence in the range between 1x1014 to 4x1016 cm−2. “Microexplosions” characterize themorphology of the swelled material; a random cellular structure consisting of cells surrounded by amorphous Ge ripples has been observed and studied in details by combining atomic force microscopy, scanning electron microscopy, and transmission electron microscopy.
Nanostructuring in Ge by self-ion implantation
ROMANO, LUCIA;GRIMALDI, Maria Grazia
2010-01-01
Abstract
We report here a detailed study about the formation and self-organization of nanoscale structures during ion beam implantation at room temperature of 300 keV Ge+ in Ge as a function of the ion fluence in the range between 1x1014 to 4x1016 cm−2. “Microexplosions” characterize themorphology of the swelled material; a random cellular structure consisting of cells surrounded by amorphous Ge ripples has been observed and studied in details by combining atomic force microscopy, scanning electron microscopy, and transmission electron microscopy.File in questo prodotto:
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