The damage produced by implanting, at room temperature, 3 mu m thick relaxed Si1-xGex layers with 2 MeV Si+ ions has been measured as a function of Ge content (x = 0.04, 0.13, 0.24 or 0.36) and Si dose in the dose range 10(10)-10(15) cm(-2). The accumulation of damage with increasing dose has been studied as a function of Ge content by Rutherford Backscattering Spectrometry, Optical Reflectivity Depth Profiling and Transmission Electron Microscopy and an increased damage efficiency in Si1-xGex with increasing x is observed. The characteristics of implantation-induced - defects have been investigated by Electron Paramagnetic Resonance. The results are discussed in the context of a model of the damage process in SiGe.
2 MeV Si ion implantation damage in relaxed Si1-xGex
PRIOLO, Francesco;
1996-01-01
Abstract
The damage produced by implanting, at room temperature, 3 mu m thick relaxed Si1-xGex layers with 2 MeV Si+ ions has been measured as a function of Ge content (x = 0.04, 0.13, 0.24 or 0.36) and Si dose in the dose range 10(10)-10(15) cm(-2). The accumulation of damage with increasing dose has been studied as a function of Ge content by Rutherford Backscattering Spectrometry, Optical Reflectivity Depth Profiling and Transmission Electron Microscopy and an increased damage efficiency in Si1-xGex with increasing x is observed. The characteristics of implantation-induced - defects have been investigated by Electron Paramagnetic Resonance. The results are discussed in the context of a model of the damage process in SiGe.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
