The roughness of Si(001) amorphous/crystalline interfaces, regrown by either solid phase epitaxy (SPE) or ion-beam-induced epitaxial crystallization (IBIEC), has been studied by measuring the scattered x-ray intensity along crystal truncation rods close to Si bulk Bragg peaks. For both regrowth methods, the interface region is well described by a discrete roughness profile. The root-mean-square roughnesses are comparable and rather small: 8.0+/-0.6 angstrom and 7.4+/-0.6 angstrom for the SPE and the IBIEC regrown sample, respectively. This indicates the presence of a common smoothing mechanism.
INTERFACE ROUGHNESS DURING THERMAL AND ION-INDUCED REGROWTH OF AMORPHOUS LAYERS ON SI(001)
PRIOLO, Francesco;
1994-01-01
Abstract
The roughness of Si(001) amorphous/crystalline interfaces, regrown by either solid phase epitaxy (SPE) or ion-beam-induced epitaxial crystallization (IBIEC), has been studied by measuring the scattered x-ray intensity along crystal truncation rods close to Si bulk Bragg peaks. For both regrowth methods, the interface region is well described by a discrete roughness profile. The root-mean-square roughnesses are comparable and rather small: 8.0+/-0.6 angstrom and 7.4+/-0.6 angstrom for the SPE and the IBIEC regrown sample, respectively. This indicates the presence of a common smoothing mechanism.File in questo prodotto:
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