Phosphorus ions at energies of 0.5 and 1 MeV and at a dose of 2 x 10(13) at./cm2 were implanted into (100), (110) and (111) Si single crystals and into 2-mu-m thick amorphous Si layers. Different tilt and twist angles were used during implanting, in a random configuration, or along the principal axial and planar directions. Concentration profiles were determined by using both spreading resistance measurements and secondary ion mass spectrometry. The data are discussed and compared with Monte Carlo calculations using the MARLOWE code. A modified Oen-Robinson model was used to obtain an expression for the energy loss as a function of the impact parameter. The model fits well the experimental profiles of implants in channeling, along a random direction and in an amorphous layer. These results are discussed in terms of a variation of the electronic density within the different channels.
MEV P IMPLANTS IN SILICON - EXPERIMENTS AND SIMULATION
PRIOLO, Francesco;
1992-01-01
Abstract
Phosphorus ions at energies of 0.5 and 1 MeV and at a dose of 2 x 10(13) at./cm2 were implanted into (100), (110) and (111) Si single crystals and into 2-mu-m thick amorphous Si layers. Different tilt and twist angles were used during implanting, in a random configuration, or along the principal axial and planar directions. Concentration profiles were determined by using both spreading resistance measurements and secondary ion mass spectrometry. The data are discussed and compared with Monte Carlo calculations using the MARLOWE code. A modified Oen-Robinson model was used to obtain an expression for the energy loss as a function of the impact parameter. The model fits well the experimental profiles of implants in channeling, along a random direction and in an amorphous layer. These results are discussed in terms of a variation of the electronic density within the different channels.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
