Ion implanted amorphous hydrogenated and unhydrogenated silicon carbide thin films (0.1 mu m thick) were investigated through the use of high resolution Raman spectroscopy as function of hydrogen and carbon concentrations in the high carbon concentration region (> 50 at.%). Raman spectra were used to investigate the vibrational properties of the alloys with particular attention to the carbon subsystem. It was found how the position and the bandwidth of the C-C Raman feature is strongly dependent on the carbon and hydrogen concentrations and can give a clear picture of the atomic structure. The results are discussed in terms of chemical ordering and tetrahedral co-ordination and are compared with the existing data on stoichiometric amorphous silicon carbide.
1430 cm(-1) Raman line in ion implanted carbon rich amorphous silicon carbide
COMPAGNINI, Giuseppe Romano;
1997-01-01
Abstract
Ion implanted amorphous hydrogenated and unhydrogenated silicon carbide thin films (0.1 mu m thick) were investigated through the use of high resolution Raman spectroscopy as function of hydrogen and carbon concentrations in the high carbon concentration region (> 50 at.%). Raman spectra were used to investigate the vibrational properties of the alloys with particular attention to the carbon subsystem. It was found how the position and the bandwidth of the C-C Raman feature is strongly dependent on the carbon and hydrogen concentrations and can give a clear picture of the atomic structure. The results are discussed in terms of chemical ordering and tetrahedral co-ordination and are compared with the existing data on stoichiometric amorphous silicon carbide.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
