Activation study of implanted N+ in 6H-SiC by scanning capacitance microscopy

Scanning Capacitance Microscopy has been used to determine the carrier concentrationprofiles of N implanted 6H-SiC samples. The implantation dose and target temperature was chosento avoid the formation of extended defects after annealing. Thermal treatments were performeddirectly in a conventional furnace with a low ramp rate (0.05°C/s) and with a high ramp rate (200°C/s). When performing high ramp rate thermal processes before the conventional furnace a higheractivation occurs.