This paper presents a fully integrated galvanically isolated dc-dc converter with data communication. The converter, which is fabricated in a 0.35-μm BCD technology, is made up of only two silicon dice and adopts two 6-kV on-chip transformers. It takes advantage of a customized architecture, which uses the isolated power control link to transfer bidirectional half-duplex data, thus reducing the overall silicon area and package size. The proposed dc-dc converter delivers up to 93-mW output power with 19% maximum power efficiency and an output voltage ranging from 2.4 V to 3.3 V, while achieving a data rate up to 50 Mb/s.

A Fully Integrated Galvanically Isolated DC-DC Converter With Data Communication

Ragonese, Egidio
;
Lombardo, Pierpaolo;Greco, Nunzio;Parisi, Alessandro;Palmisano, Giuseppe
2018-01-01

Abstract

This paper presents a fully integrated galvanically isolated dc-dc converter with data communication. The converter, which is fabricated in a 0.35-μm BCD technology, is made up of only two silicon dice and adopts two 6-kV on-chip transformers. It takes advantage of a customized architecture, which uses the isolated power control link to transfer bidirectional half-duplex data, thus reducing the overall silicon area and package size. The proposed dc-dc converter delivers up to 93-mW output power with 19% maximum power efficiency and an output voltage ranging from 2.4 V to 3.3 V, while achieving a data rate up to 50 Mb/s.
2018
Amplitude shift keying (ASK) demodulator; common-mode transient immunity (CMTI); D-class oscillator; dynamic threshold compensation; electromagnetic (EM) simulations; full-bridge rectifier; galvanic isolation; integrated circuits (ICs); integrated transformers.; silicon oxide; Electrical and Electronic Engineering
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/321500
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