Drift mobility in 4H-SiC Schottky diodes

In this work, the temperature dependence of the mobility along the c axis in 4H-SiC was determined.from the current voltage I-V characteristics of Schottky diodes in the temperature range 80–700 K.The procedure used series resistance measurements in Schottky diodes for extracting the mobilityvalues in the epitaxial layer. For a dopant concentration of 1.21016 cm−3, at room temperature, amobility value of 724 cm2 / V s was found, which decreased to 48.6 cm2 / V s at 700 K. In thetemperature range 200–700 K, a dependence of the mobility as T−3 was determined.