In this paper we present the results of an X-ray photoelectron spectroscopy study on thin films of amorphous SiO2 bombarded with neutral or ionic (positive) Ar beams at keV energy. All the bombardments have been performed inside the preparation chamber of the XPS spectrometer so that the samples have been compared before and after the irradiation without exposing the surface to the air. Moreover, particular care has been taken in measuring the flux of the neutral beam. This measurement has been performed utilising the secondary electrons ejected by the surface of the metallic support of the sample, so that the comparison between the effects induced by neutral and ionic bombardment is made at thr, same fluence, This in situ comparison allowed us to conclude that for bombardment of SiO2 with ions or neutrals, the detected XPS modifications are almost identical, within the experimental error, for both kinds of beam, This finding is at variance with recent studies claiming different behaviour of the SiO2 depending on the charge state of the bombarding beam, Possible explanations for this discrepancy are discussed.
Ion versus neutral irradiation of thin films of amorphous SiO2: An in situ X-ray photoelectron spectroscopy study
TORRISI, Alberto;LICCIARDELLO, Antonino;
1996-01-01
Abstract
In this paper we present the results of an X-ray photoelectron spectroscopy study on thin films of amorphous SiO2 bombarded with neutral or ionic (positive) Ar beams at keV energy. All the bombardments have been performed inside the preparation chamber of the XPS spectrometer so that the samples have been compared before and after the irradiation without exposing the surface to the air. Moreover, particular care has been taken in measuring the flux of the neutral beam. This measurement has been performed utilising the secondary electrons ejected by the surface of the metallic support of the sample, so that the comparison between the effects induced by neutral and ionic bombardment is made at thr, same fluence, This in situ comparison allowed us to conclude that for bombardment of SiO2 with ions or neutrals, the detected XPS modifications are almost identical, within the experimental error, for both kinds of beam, This finding is at variance with recent studies claiming different behaviour of the SiO2 depending on the charge state of the bombarding beam, Possible explanations for this discrepancy are discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
