ZnO nanorod arrays fabrication via chemical bath deposition: Ligand concentration effect study RID F-4514-2011

A new ligand, N, N, N', N'-tetramethylethylenediamine, has been used to grow ZnO nanorods on silicon substrates via a two steps approach. A preliminary seeding on silicon substrates has been combined with chemical bath deposition using a Zinc acetate - N, N, N', N'-tetramethylethylenediamine aqueous solution. The used diamino ligand has been selected as Zn(2+) complexing agent and the related hydrolysis generates the reacting ions (Zn(2-) and OH(-)) responsible for the ZnO growth. The seed layer has been annealed at low temperature (<200 degrees C) and the ZnO nanorods have been grown on this ZnO amorphous layer. There is experimental evidence that the ligand concentration (ranging from 5 to 50 mM) strongly affects the alignment of ZnO nanorods on the substrate, their lateral dimension and the related surface density. Length and diameter of ZnO nanorods increase upon increasing the ligand concentration, while the nanorod density decreases. Even more important, it has been demonstrated, as proof of concept, that chemical bath deposition can be usefully combined with colloidal lithography for selective ZnO nanorod deposition Thus, by patterning the ZnO seeded substrate with polystyrene microsphere colloidal lithography, regular Si hole arrays, spatially defined by hexagonal ZnO nanorods, have been successfully obtained. (C) 2010 Elsevier Ltd. All rights reserved.