In this work we report two promising approaches to control dopant diffusion and promote dopant incorporation and electrical activation in Ge. The former is based on reducing the vacancy concentration, and hence the dopant diffusivity, by increasing the interstitial concentration through high-fluence O implant and the formation of stable GeO2 complexes. The other approach exploits the non equilibrium processes occurring under laser annealing, that lead to the incorporation (and electrical activation) of dopants to concentration levels much higher than those achievable by any other conventional technique; all the related phenomena occurring are hence studied in details.

Challenges and opportunities for doping control in Ge for micro and optoelectronics applications

BRUNO, ELENA;MIRABELLA, SALVATORE;PRIOLO, Francesco
2013-01-01

Abstract

In this work we report two promising approaches to control dopant diffusion and promote dopant incorporation and electrical activation in Ge. The former is based on reducing the vacancy concentration, and hence the dopant diffusivity, by increasing the interstitial concentration through high-fluence O implant and the formation of stable GeO2 complexes. The other approach exploits the non equilibrium processes occurring under laser annealing, that lead to the incorporation (and electrical activation) of dopants to concentration levels much higher than those achievable by any other conventional technique; all the related phenomena occurring are hence studied in details.
File in questo prodotto:
File Dimensione Formato  
BrunoECSTransactions2013.pdf

solo gestori archivio

Descrizione: Articolo principale
Tipologia: Versione Editoriale (PDF)
Licenza: NON PUBBLICO - Accesso privato/ristretto
Dimensione 315.07 kB
Formato Adobe PDF
315.07 kB Adobe PDF   Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/48490
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? 0
social impact