The electrical behavior of Au/SiOx/n-GaAs Schottky structures has been studied using a statistical approach. II has been concluded that the obtained unusual electrical behavior is connected mainly with different Fermi-level pinning position and lateral microinhomogeneities of the barrier height induced by different average thickness of the SiOx interlayer along the wafer. The results of cross-sectional transmission electron microscopy and the temperature dependence of the electrical characteristics confirm this conclusion. (C) 1998 Elsevier Science Ltd. All rights reserved. RI Margaritondo, Giorgio/B-1367-2008; Pecz, Bela/A-7134-2011
Electrical characterization of Au/SiOx/n-GaAs junctions
TERRASI, Antonio;
1998-01-01
Abstract
The electrical behavior of Au/SiOx/n-GaAs Schottky structures has been studied using a statistical approach. II has been concluded that the obtained unusual electrical behavior is connected mainly with different Fermi-level pinning position and lateral microinhomogeneities of the barrier height induced by different average thickness of the SiOx interlayer along the wafer. The results of cross-sectional transmission electron microscopy and the temperature dependence of the electrical characteristics confirm this conclusion. (C) 1998 Elsevier Science Ltd. All rights reserved. RI Margaritondo, Giorgio/B-1367-2008; Pecz, Bela/A-7134-2011File in questo prodotto:
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