Approximate solutions to the quantum drift-diffusion model for semiconductors are found with the aid of the symmetry group analysis. The system is written as singularly perturbed equations which are solved up to first order in the scaled reduced Planck constant. An example of solution of a nanoscale n+-n junction is provided and the difference with the classical case is shown

Approximate solutions to the quantum drift-diffusion model of semiconductors

ROMANO, Vittorio;TRACINA', RITA
2007-01-01

Abstract

Approximate solutions to the quantum drift-diffusion model for semiconductors are found with the aid of the symmetry group analysis. The system is written as singularly perturbed equations which are solved up to first order in the scaled reduced Planck constant. An example of solution of a nanoscale n+-n junction is provided and the difference with the classical case is shown
2007
drift diffusion; semiconductors; group analysis
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/5873
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