Graphene oxide (GO) and partially reduced GO (r-GO), containing sp2 domains in a sp3 matrix, show interesting photoluminescent properties, related to the bandgap of the π states and to the defects present into the graphitelike component[1]. In this work graphene oxide, obtained in water by a modified Hummers method [2], was subsequently partially reduced by laser irradiation at 532 nm. Photoluminescence measurements showed a well-rendered gradual shift of the emission maximum to lower wavelengths with increasing of the irradiation time, until reaching the limit value of 450 nm. Tunability of the photoluminescence of r-GO, depending on its progressive reduction by laser irradiation, can be an interesting aspect for the use of new unconventional materials in the fields of optics electronic. It has been also found that the reduction is mainly due to the decrease of C-O and COH groups with respect to the others, as evidenced by infrared absorption and X-ray photoelectron spectroscopy (XPS) data. Moreover the freshly reduced sheets show a progressive hydrophobicity which leads to a different interaction with previously prepared neat surfaces as that of a silicon wafer

Tunable Photoluminescence of Graphene Oxide Reduced by Laser Irradiation

FRAGALA', Maria Elena;COMPAGNINI, Giuseppe Romano
2013

Abstract

Graphene oxide (GO) and partially reduced GO (r-GO), containing sp2 domains in a sp3 matrix, show interesting photoluminescent properties, related to the bandgap of the π states and to the defects present into the graphitelike component[1]. In this work graphene oxide, obtained in water by a modified Hummers method [2], was subsequently partially reduced by laser irradiation at 532 nm. Photoluminescence measurements showed a well-rendered gradual shift of the emission maximum to lower wavelengths with increasing of the irradiation time, until reaching the limit value of 450 nm. Tunability of the photoluminescence of r-GO, depending on its progressive reduction by laser irradiation, can be an interesting aspect for the use of new unconventional materials in the fields of optics electronic. It has been also found that the reduction is mainly due to the decrease of C-O and COH groups with respect to the others, as evidenced by infrared absorption and X-ray photoelectron spectroscopy (XPS) data. Moreover the freshly reduced sheets show a progressive hydrophobicity which leads to a different interaction with previously prepared neat surfaces as that of a silicon wafer
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/103584
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