Graphene, a two dimensional building block for carbon allotropes of many other dimensionality, shows remarkable electronic and optical properties that attract enormous interest. Graphene’s unique properties make it a promising material for future electronic devices. In order to make graphene a real technology, a control of its electronic and mechanical properties is a must. In this respect, a crucial step for the use of graphene layers in device fabrication is the deposition onto suitable substrates, understanding the interaction with them. Till now, micromechanical cleavage of graphite has been used to produce high-quality graphene sheets. The aim of this work is to study the strain effects induced in graphene by annealing processes using Raman spectroscopy. Here, the graphene samples have been prepared by mechanical cleavage and transferred onto a Si wafer with a certain thickness of SiO2. After thermal treatments performed in vacuum at temperatures up to 400° C, the Raman spectra show significant changes in both the most prominent features of graphene (G and 2D bands). Moreover we observed a peculiar behaviour of the 2D band with increasing temperature, attributed to lattice distortion which could be induced by the interaction with the substrate.
|Titolo:||Raman monitoring of stress effects in annealed single layer graphene|
|Data di pubblicazione:||2011|
|Appare nelle tipologie:||4.2 Abstract in Atti di convegno|