Abstract—The Multicomb variance reduction technique has been introduced in the Direct Monte Carlo Simulation for submicrometric semiconductors. We have implemented the method in bulk silicon and demonstrated its effectiveness in the study of hot electron effects. Our simulations show that the variance of hot electrons is reduced with a small computational cost.

A Variance Reduction Scheme for Monte Carlo semiconductor simulations using the Pi2S2 Grid

MUSCATO, Orazio;
2009-01-01

Abstract

Abstract—The Multicomb variance reduction technique has been introduced in the Direct Monte Carlo Simulation for submicrometric semiconductors. We have implemented the method in bulk silicon and demonstrated its effectiveness in the study of hot electron effects. Our simulations show that the variance of hot electrons is reduced with a small computational cost.
2009
978-88-95892-02-3
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/109556
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