In this communication a new low-voltage low-power CMOS voltage reference independent of temperature is presented. It is based on subthreshold MOSFETs and on compensating a PTAT-based variable with the gate-source voltage of a subthreshold MOSFET. The circuit, designed with a standard 1.2-μm CMOS technology, exhibits a stable voltage of about 300 mV with a temperature coefficient of 87 ppm/°C in the range [0°, + 70°] which increases up to 288 ppm/°C in the range [- 40°, + 120°]
A new voltage reference topology based on subthreshold MOSFETs
GIUSTOLISI, Gianluca;PALUMBO, Gaetano;
2002-01-01
Abstract
In this communication a new low-voltage low-power CMOS voltage reference independent of temperature is presented. It is based on subthreshold MOSFETs and on compensating a PTAT-based variable with the gate-source voltage of a subthreshold MOSFET. The circuit, designed with a standard 1.2-μm CMOS technology, exhibits a stable voltage of about 300 mV with a temperature coefficient of 87 ppm/°C in the range [0°, + 70°] which increases up to 288 ppm/°C in the range [- 40°, + 120°]File in questo prodotto:
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C023 - A New Voltage Reference Topology based on Subthreshold MOSTEFs.pdf
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