Scanning Capacitance Microscopy has been used to determine the carrier concentrationprofiles of N implanted 6H-SiC samples. The implantation dose and target temperature was chosento avoid the formation of extended defects after annealing. Thermal treatments were performeddirectly in a conventional furnace with a low ramp rate (0.05°C/s) and with a high ramp rate (200°C/s). When performing high ramp rate thermal processes before the conventional furnace a higheractivation occurs.
Titolo: | Activation study of implanted N+ in 6H-SiC by scanning capacitance microscopy | |
Autori interni: | ||
Data di pubblicazione: | 2003 | |
Rivista: | ||
Handle: | http://hdl.handle.net/20.500.11769/3072 | |
Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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