Scanning Capacitance Microscopy has been used to determine the carrier concentrationprofiles of N implanted 6H-SiC samples. The implantation dose and target temperature was chosento avoid the formation of extended defects after annealing. Thermal treatments were performeddirectly in a conventional furnace with a low ramp rate (0.05°C/s) and with a high ramp rate (200°C/s). When performing high ramp rate thermal processes before the conventional furnace a higheractivation occurs.

Activation study of implanted N+ in 6H-SiC by scanning capacitance microscopy

CALCAGNO L;F. GIANNAZZO;P. MUSUMECI;F. ROCCAFORTE;
2003-01-01

Abstract

Scanning Capacitance Microscopy has been used to determine the carrier concentrationprofiles of N implanted 6H-SiC samples. The implantation dose and target temperature was chosento avoid the formation of extended defects after annealing. Thermal treatments were performeddirectly in a conventional furnace with a low ramp rate (0.05°C/s) and with a high ramp rate (200°C/s). When performing high ramp rate thermal processes before the conventional furnace a higheractivation occurs.
File in questo prodotto:
File Dimensione Formato  
Activation study of implanted N+ in 6H-SiC by scanning capacitance microscopy.pdf

non disponibili

Tipologia: Versione Editoriale (PDF)
Dimensione 378.18 kB
Formato Adobe PDF
378.18 kB Adobe PDF   Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/3072
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 12
  • ???jsp.display-item.citation.isi??? 10
social impact