Scanning Capacitance Microscopy has been used to determine the carrier concentrationprofiles of N implanted 6H-SiC samples. The implantation dose and target temperature was chosento avoid the formation of extended defects after annealing. Thermal treatments were performeddirectly in a conventional furnace with a low ramp rate (0.05°C/s) and with a high ramp rate (200°C/s). When performing high ramp rate thermal processes before the conventional furnace a higheractivation occurs.
Activation study of implanted N+ in 6H-SiC by scanning capacitance microscopy
CALCAGNO L;F. GIANNAZZO;P. MUSUMECI;F. ROCCAFORTE;
2003-01-01
Abstract
Scanning Capacitance Microscopy has been used to determine the carrier concentrationprofiles of N implanted 6H-SiC samples. The implantation dose and target temperature was chosento avoid the formation of extended defects after annealing. Thermal treatments were performeddirectly in a conventional furnace with a low ramp rate (0.05°C/s) and with a high ramp rate (200°C/s). When performing high ramp rate thermal processes before the conventional furnace a higheractivation occurs.File in questo prodotto:
File | Dimensione | Formato | |
---|---|---|---|
Activation study of implanted N+ in 6H-SiC by scanning capacitance microscopy.pdf
solo gestori archivio
Tipologia:
Versione Editoriale (PDF)
Dimensione
378.18 kB
Formato
Adobe PDF
|
378.18 kB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.