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EnglishSilicon photomultiplier (SiPM) detectors are emerging semiconductor devices addressing the challenge of low-light detection for single-photon counting contexts. High-performance SiPM front-end electronics requires availability of reliable electrical models. Many accurate SiPM models have matured in recent years; nevertheless, circuit parameter extraction is fairly burdensome and involves extensive measurement phases to be executed. Starting from a recently developed model of a SiPM detector coupled to the read-out electronics, a new and effective analytical procedure is proposed in this paper for extracting the SiPM electrical parameters from experimental measurements. This original technique is applied to a real 3Ã3-mm2SiPM detector, and validation is confirmed by a good agreement between simulations and measurements. Furthermore, independent cross-check validation based on experimental tests is carried out, corroborating the effectiveness of the adopted extraction procedure.
| Titolo: | Novel straightforward and effective extraction methodology for SiPM model parameters | |
| Autori interni: | GRASSO, ALFIO DARIO (Corresponding) | |
| Data di pubblicazione: | 2017 | |
| Handle: | http://hdl.handle.net/20.500.11769/316473 | |
| ISBN: | 9781538639740 | |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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http://hdl.handle.net/20.500.11769/316473
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