Novel straightforward and effective extraction methodology for SiPM model parameters

Silicon photomultiplier (SiPM) detectors are emerging semiconductor devices addressing the challenge of low-light detection for single-photon counting contexts. High-performance SiPM front-end electronics requires availability of reliable electrical models. Many accurate SiPM models have matured in recent years; nevertheless, circuit parameter extraction is fairly burdensome and involves extensive measurement phases to be executed. Starting from a recently developed model of a SiPM detector coupled to the read-out electronics, a new and effective analytical procedure is proposed in this paper for extracting the SiPM electrical parameters from experimental measurements. This original technique is applied to a real 3×3-mm2SiPM detector, and validation is confirmed by a good agreement between simulations and measurements. Furthermore, independent cross-check validation based on experimental tests is carried out, corroborating the effectiveness of the adopted extraction procedure.