In this paper a 24-GHz low-noise amplifier for automotive short-range radar applications is presented. The circuit was fabricated in a 0.13-mu;m SiGe BiCMOS process and includes three fully differential transformer-loaded cascode stages with variable gain functionality. The amplifier provides an outstanding power gain of 35 dB and a noise figure as low as 3.4 dB, exhibiting a reverse isolation better than -60 dB. The circuit guarantees an input 1-dB compression point of -12 dBm, while drawing 56 mA from a 2.4-V supply. © 2008 EuMA.

A 0.13-um SiGe BiCMOS LNA for 24-GHz automotive short-range radar

Ragonese, E.;Palmisano, G.
2008-01-01

Abstract

In this paper a 24-GHz low-noise amplifier for automotive short-range radar applications is presented. The circuit was fabricated in a 0.13-mu;m SiGe BiCMOS process and includes three fully differential transformer-loaded cascode stages with variable gain functionality. The amplifier provides an outstanding power gain of 35 dB and a noise figure as low as 3.4 dB, exhibiting a reverse isolation better than -60 dB. The circuit guarantees an input 1-dB compression point of -12 dBm, while drawing 56 mA from a 2.4-V supply. © 2008 EuMA.
2008
9782874870064
Electrical and Electronic Engineering
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/328109
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