This paper deals with the performance evaluation of enhanced MOSFET based on a trench gate layout in full-bridge DC-DC power converter with synchronous rectifiers for telecom power supply applications. Outlines of the switches design needs both in the primary and secondary side of the insulated full-bridge converter are treated. In particular, the synchronous rectifier MOSFETs selection criteria are highlighted. Main focus of the paper is on minimization of devices power losses contribution in order to improve power converter efficiency. Furthermore, an extended characterization of the advanced MOSFET devices in static and dynamic conditions is carried out.

Full-Bridge DC-DC Power Converter for Telecom applications with Advanced Trench Gate MOSFETs

Angelo Raciti;RIZZO, SANTI AGATINO
2018-01-01

Abstract

This paper deals with the performance evaluation of enhanced MOSFET based on a trench gate layout in full-bridge DC-DC power converter with synchronous rectifiers for telecom power supply applications. Outlines of the switches design needs both in the primary and secondary side of the insulated full-bridge converter are treated. In particular, the synchronous rectifier MOSFETs selection criteria are highlighted. Main focus of the paper is on minimization of devices power losses contribution in order to improve power converter efficiency. Furthermore, an extended characterization of the advanced MOSFET devices in static and dynamic conditions is carried out.
2018
978-1-5386-5370-8
MOSFET; trench-gate; DC-DC converter; synchronous rectification; power losses
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/335924
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