Photoluminescence (PL) and time resolved PL are well established as important experimental techniques to study electronic properties of SiC. We studied the influence of ion- implantation on the photoluminescence peak at 423nm and the variation of the minority carrier lifetime (MCL).

ROOM TEMPERATURE STEADY STATE AND TIME RESOLVED PL CHARACTERIZATION OF ION IRRADIATION INDUCED DEFECTS IN 6H-SIC

REITANO, Riccardo;MUSUMECI, Paolo;
2005

Abstract

Photoluminescence (PL) and time resolved PL are well established as important experimental techniques to study electronic properties of SiC. We studied the influence of ion- implantation on the photoluminescence peak at 423nm and the variation of the minority carrier lifetime (MCL).
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11769/3665
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