Photoluminescence (PL) and time resolved PL are well established as important experimental techniques to study electronic properties of SiC. We studied the influence of ion- implantation on the photoluminescence peak at 423nm and the variation of the minority carrier lifetime (MCL).
ROOM TEMPERATURE STEADY STATE AND TIME RESOLVED PL CHARACTERIZATION OF ION IRRADIATION INDUCED DEFECTS IN 6H-SIC
REITANO, Riccardo;MUSUMECI, Paolo;
2005-01-01
Abstract
Photoluminescence (PL) and time resolved PL are well established as important experimental techniques to study electronic properties of SiC. We studied the influence of ion- implantation on the photoluminescence peak at 423nm and the variation of the minority carrier lifetime (MCL).File in questo prodotto:
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Room Temperature Steady State and Time Resolved PL Characterization of Ion Irradiation Induced Defects in 6H-SiC.pdf
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