The aim of this paper is to provide an analytical model of the power devices turn-off in a Silicon Carbide (SiC) MOSFETs-based inverter leg. In the proposed modeling approach, different methods have been evaluated to characterize the transconductance profiles, which playa key role in the switching behavior of the power devices. The proposed modeling method represents a good compromise between computational efforts and accuracy. The last has been evaluated by comparing simulation results with experimental tests, under different operating conditions.
|Titolo:||Switching Modeling of Power Devices Turn-Off in a SiC Mosfets-based Inverter Leg|
|Data di pubblicazione:||2019|
|Appare nelle tipologie:||4.1 Contributo in Atti di convegno|