We present a new analytical approach for understanding and tuning the composition of ternary nanowires of III-V semiconductor compounds and interfacial abruptness of axial nanowire heterostructures. It is shown how the interfacial abruptness can be sharpened to the monolayer limit in Au-catalyzed axial InP/InAs/InP NW heterostructures.
Modeling the composition of ternary III-V nanowires and axial nanowire heterostructures
Battiato S.;
2018-01-01
Abstract
We present a new analytical approach for understanding and tuning the composition of ternary nanowires of III-V semiconductor compounds and interfacial abruptness of axial nanowire heterostructures. It is shown how the interfacial abruptness can be sharpened to the monolayer limit in Au-catalyzed axial InP/InAs/InP NW heterostructures.File in questo prodotto:
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