We present a new analytical approach for understanding and tuning the composition of ternary nanowires of III-V semiconductor compounds and interfacial abruptness of axial nanowire heterostructures. It is shown how the interfacial abruptness can be sharpened to the monolayer limit in Au-catalyzed axial InP/InAs/InP NW heterostructures.

Modeling the composition of ternary III-V nanowires and axial nanowire heterostructures

Battiato S.;
2018-01-01

Abstract

We present a new analytical approach for understanding and tuning the composition of ternary nanowires of III-V semiconductor compounds and interfacial abruptness of axial nanowire heterostructures. It is shown how the interfacial abruptness can be sharpened to the monolayer limit in Au-catalyzed axial InP/InAs/InP NW heterostructures.
2018
978-1-5386-3612-1
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/385019
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