Modeling of SiC-MOSFET Converter Leg including Parasitics of Printed Circuit Board Layout and Device Packaging

The aim of this paper is to provide an accurate analytical modeling of a Silicon Carbide MOSFETs-based half bridge converter including all the major contributions due to parasitic elements of device package and PCB layout. The turn on and off switching transients as well as the on-state conduction are mathematically described, implemented in Matlab and validated through a wide experimental tests campaign. Differently than previous contributions in this field, the adopted analytical modeling of SiC MOSFET during switching transient offers a good compromise between computational efforts and accuracy.