A resistor-less CMOS reference generator exploiting transistors working in the subthreshold region is presented. Post-layout simulations using a 28-nm CMOS bulk technology show a temperature coefficient equal to 20.4 ppm/°C and a line sensitivity of 0.009 %/V, with an area occupation of only 156.42mu {m}2 and a nominal current consumption around 20nA. Thanks to the adoption of a configurable active load, the circuit leads to 6.9× lower process sensitivity across corners.
28-nm CMOS Resistor-Less Voltage Reference with Process Corner Compensation
Grasso A. D.
;Pennisi S.;Venezia C.Primo
2021-01-01
Abstract
A resistor-less CMOS reference generator exploiting transistors working in the subthreshold region is presented. Post-layout simulations using a 28-nm CMOS bulk technology show a temperature coefficient equal to 20.4 ppm/°C and a line sensitivity of 0.009 %/V, with an area occupation of only 156.42mu {m}2 and a nominal current consumption around 20nA. Thanks to the adoption of a configurable active load, the circuit leads to 6.9× lower process sensitivity across corners.File in questo prodotto:
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