This work presents a 78.5-nA, 115-ppm/°C temperature coefficient, switched capacitor current reference for batteryless and US-powered implantable biomedical devices. It is also characterized by the presence of a trimming network that allows compensating the PVT variations. The circuit is designed in a 28-nm Bulk CMOS technology provided by TSMC and full post-layout characterization is provided. The proposed solution shows a 75.8-% power utilization, an overall power consumption of about 62 nW when operating under 0.6-V power supply the lowest area occupation compared with previous arts, making the circuit well suitable also for ultra-low power and sub-1V sensor nodes for the Internet-of-Things.

A 28-nm, 0.5-V, 78.5-nA Switched Capacitor Current Reference with Active Trimming for sub-1V Implantable Medical Devices

Ballo A.;Grasso A. D.
Ultimo
;
Privitera M.
Primo
2023-01-01

Abstract

This work presents a 78.5-nA, 115-ppm/°C temperature coefficient, switched capacitor current reference for batteryless and US-powered implantable biomedical devices. It is also characterized by the presence of a trimming network that allows compensating the PVT variations. The circuit is designed in a 28-nm Bulk CMOS technology provided by TSMC and full post-layout characterization is provided. The proposed solution shows a 75.8-% power utilization, an overall power consumption of about 62 nW when operating under 0.6-V power supply the lowest area occupation compared with previous arts, making the circuit well suitable also for ultra-low power and sub-1V sensor nodes for the Internet-of-Things.
2023
978-1-6654-5109-3
Current reference
implanted biomedical devices
Internet of Things
low power
low voltage
sensor nodes
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/571349
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