The paper presents a straightforward modelling approach to compute the power loss distribution in GaN HEMT-based three-phase and three-level (3L) active neutral point clamped (ANPC) inverters, for different pulse width modulated techniques. Conduction and switching losses averaged over each PWM switching period are analytically computed by starting from the operating conditions of the AC load and data of GaN power devices. The accuracy of the proposed analytical approach is evaluated through a circuit-based power electronics simulation tool, applied to different carrier-based PWM strategies.

Power Loss Modelling of GaN HEMT-based 3L-ANPC Three-Phase Inverter for different PWM Techniques

Giacomo Scelba;Mario Cacciato
2022-01-01

Abstract

The paper presents a straightforward modelling approach to compute the power loss distribution in GaN HEMT-based three-phase and three-level (3L) active neutral point clamped (ANPC) inverters, for different pulse width modulated techniques. Conduction and switching losses averaged over each PWM switching period are analytically computed by starting from the operating conditions of the AC load and data of GaN power devices. The accuracy of the proposed analytical approach is evaluated through a circuit-based power electronics simulation tool, applied to different carrier-based PWM strategies.
2022
9789075815399
Active neutral point clamped converter; Conduction losses; DC-AC converters; Gallium Nitride (GaN); Power Converter Modelling; Power converters for EV; PWM modulation techniques; Switching losses
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/575731
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 3
  • ???jsp.display-item.citation.isi??? 1
social impact