The paper deals with an improved high-voltage smart monolithic Gallium Nitride (GaN) Field effect transistor (FET) as a power device integrated with a control circuit and gate driver with protection features. The high energy density and increased switching frequency of the GaN FETs, together with the low voltage control part, allow for the realisation of a DC-DC converter with a reduced size and high performance. In the paper, a Flyback converter based on the monolithic integrated power switch and signal circuits is described and experimentally evaluated to demonstrate the effectiveness of the proposed solution.
Experimental Evaluation of a Monolithic Gallium Nitride Devices Solution for Flyback Converter Devoted to Auxiliary Power Supply
Rizzo S.
2023-01-01
Abstract
The paper deals with an improved high-voltage smart monolithic Gallium Nitride (GaN) Field effect transistor (FET) as a power device integrated with a control circuit and gate driver with protection features. The high energy density and increased switching frequency of the GaN FETs, together with the low voltage control part, allow for the realisation of a DC-DC converter with a reduced size and high performance. In the paper, a Flyback converter based on the monolithic integrated power switch and signal circuits is described and experimentally evaluated to demonstrate the effectiveness of the proposed solution.File in questo prodotto:
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