The aim of this paper is to develop an analytical model of a single and two parallel configuration silicon carbide power MOSFETs utilizing the state-space equations to offer a straightforward solution with reduced computational efforts, still maintaining high accuracy. The analytical model of each single power device is directly obtained from technical specifications. Although the main target is to investigate the unbalanced phenomena in paralleled SiC devices, the proposed approach additionally provides a practical model for testing electric drive configurations, control strategies and fault tolerant drives. The analytical model has been validated through simulation implemented in Matlab/Simulink, comparing transient commutation and computational times with SPICE models.
An Analytical Model of a SiC MOSFETs in Parallel Configuration
Tornello Luigi Danilo;Spitaleri Maria Giorgia;Scarcella Giuseppe;Cacciato Mario
2024-01-01
Abstract
The aim of this paper is to develop an analytical model of a single and two parallel configuration silicon carbide power MOSFETs utilizing the state-space equations to offer a straightforward solution with reduced computational efforts, still maintaining high accuracy. The analytical model of each single power device is directly obtained from technical specifications. Although the main target is to investigate the unbalanced phenomena in paralleled SiC devices, the proposed approach additionally provides a practical model for testing electric drive configurations, control strategies and fault tolerant drives. The analytical model has been validated through simulation implemented in Matlab/Simulink, comparing transient commutation and computational times with SPICE models.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
