4H-SiC epitaxial layers have been grown using trichlorosilane (TCS) as the silicon precursor source together with ethylene as the carbon precursor source. A higher C/Si ratio is necessary compared with the silane/ethylene system. This ratio has to be reduced especially at higher Si/H 2 ratio because the step-bunching effect occurs. From the comparison with the process that uses silane as the silicon precursor, a 15% higher growth rate has been found using TCS (trichlorosilane) at the same Si/H 2 ratio. Furthermore, in the TCS process, the presence of chlorine, that reduces the possibility of silicon droplet formation, allows to use a high Si/H 2 ratio and then to reach high growth rates (16 μm/h). The obtained results on the growth rates, the surface roughness and the crystal quality are very promising.
|Titolo:||SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor|
|Data di pubblicazione:||2006|
|Appare nelle tipologie:||4.1 Contributo in Atti di convegno|