Nanostructuration of GaN: A Promising Route to Quantum Single-Photon Sources

Single Photon Sources (SPSs) can generate coherent streams of single photons with well-defined quantum properties such as high-degree of coherence and precisely controllable quantum correlation. This makes them essential building blocks for various quantum technologies and quantum sensing applications. Beyond its well-known uses in power electronics and lasers/LEDs applications, GaN is attracting interest as a material for quantum technologies, thanks to the unique electro-optical properties of its nanostructured counterparts which have been shown to produce SPSs operating in the blue and visible range close to the room-temperature regime. Nanostructuration of GaN, including the formation of nanoporous morphologies, and the synthesis of nanowires and nanoparticles, was carried out using Photo-Electroless Etching (PEE) and Pulsed Laser Irradiation in Liquid (PLIL). The morphological evolution of the etched GaN nanoporous substrate was investigated using Atomic Force Microscopy (AFM) and Scanning Electron Micro