Nanostructuration of GaN: A Promising Route to Quantum Single-Photon Sources

Single Photon Sources (SPSs) are capable of producing coherent streams of single photons characterized by distinct quantum properties, including high coherence and controllable quantum correlations. These attributes render SPSs vital components for a variety of quantum technologies and sensing applications. Gallium Nitride (GaN), traditionally recognized for its roles in power electronics and lighting technologies, is increasingly being explored for its potential in quantum technologies. This is largely due to the exceptional electro-optical properties of its nanostructured forms, which have demonstrated the ability to generate SPSs that operate in the blue and visible spectrum at or near room temperature.1 The nanostructuring of GaN, which includes creating nanoporous structures and nanowires, has been achieved through Photo-Electroless Etching (PEE), a technique noted for its precision and cost-effectiveness. The morphological changes in the etched GaN nanoporous substrate were analyzed using Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). Additionally, the optical characteristics of these nanostructures were evaluated through room-temperature Cathodoluminescence (CL) and photoluminescence (PL) spectroscopy, establishing a connection between the observed emission features and the underlying nanostructures. This work is supported by PNRR MUR project PE0000023-NQSTI the PNRR - NQSTI "National Quantum Science and Technology Institute" Spoke 5.