This paper presents the design of a 800 V 11 kVA three-level three-phase active neutral point clamped inverter, utilizing 650 V gallium nitride enhancement-mode high-electron-mobility transistors. The proposed scaled-down prototype design will be evaluated in electric traction systems. The modular approach of the presented power converter design is detailed discussed and the different parts composing the power converter are presented, together with critical design issues. In particular, the design addresses the gate driver design, as well as technical issues related to the thermal analysis, dc current density and parasitics extraction.
Design of a Modular GaN-Based Three-Phase and Three-Level ANPC Inverter
Di Cataldo, Angelo;Patti, Dario;Scelba, Giacomo;Cacciato, Mario;Gennaro, Francesco
2024-01-01
Abstract
This paper presents the design of a 800 V 11 kVA three-level three-phase active neutral point clamped inverter, utilizing 650 V gallium nitride enhancement-mode high-electron-mobility transistors. The proposed scaled-down prototype design will be evaluated in electric traction systems. The modular approach of the presented power converter design is detailed discussed and the different parts composing the power converter are presented, together with critical design issues. In particular, the design addresses the gate driver design, as well as technical issues related to the thermal analysis, dc current density and parasitics extraction.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
