A Comparative Analysis of NMOS Linear Dropout Voltage regulators in 65 nm CMOS technology

This paper proposes a comparison of different topologies of NMOS low dropout voltage regulators (NMOSLDOs) designed for low-voltage and low-power applications. Different topologies are considered, namely the conventional one, in which the error amplifier drives directly the pass transistor, the charge pump-assisted LDO, in which the error amplifier is supplied by a charge pump, and a new solution, in which the charge pump acts as a signal amplifier and directly drives the pass transistor. A comparative analysis is carried out on a theoretical basis and through simulation results on CMOS 6 5 - nm implementation.