This paper deals with single-stage, single-ended inverter-based Operational Transconductance Amplifiers (OTAs) designed with Rectangular Transistor Arrays (RTAs) and Improved Composite Transistors (ICTs), targeting ultra-low-voltage and ultra-low power applications. Both solutions are implemented using 180nm CMOS standard process technology and validated through experimental results. Both the OTAs maintain compact size (typical of a digital-based architecture), enhanced average slew rate, S Ra v, performance, and, hence, improved large-signal power efficiency (high FOML). The proposed ICT solution exploits forward-body biasing and composite transistor architecture to improve the differential voltage gain compared to the RTA implementation of the same OTA. Operations from a supply voltage, VDD, ranging from 0.5 V to 0.3 V are demonstrated in this work. In particular, the proposed reference-less inverter-based ICT OTA achieves a differential voltage gain of 50 dB(35 dB) and 17 kHz (0.3 kHz) gain-bandwidth product, G B W, at 0.5 V(0.3 V), while driving 30-pF capacitive load. It shows power consumption ranging from 50 nW at 0.5 V down to only 750 pW at 0.3 V, while occupying 3,250 μ m2
VDD -Scalable and Reference-Less Body-Biased Inverter-Based OTA Exploiting Improved Composite Transistors for ULV/ULP Applications
Privitera M.
Primo
;Aiello O.;Grasso A. D.;Alioto M.
2025-01-01
Abstract
This paper deals with single-stage, single-ended inverter-based Operational Transconductance Amplifiers (OTAs) designed with Rectangular Transistor Arrays (RTAs) and Improved Composite Transistors (ICTs), targeting ultra-low-voltage and ultra-low power applications. Both solutions are implemented using 180nm CMOS standard process technology and validated through experimental results. Both the OTAs maintain compact size (typical of a digital-based architecture), enhanced average slew rate, S Ra v, performance, and, hence, improved large-signal power efficiency (high FOML). The proposed ICT solution exploits forward-body biasing and composite transistor architecture to improve the differential voltage gain compared to the RTA implementation of the same OTA. Operations from a supply voltage, VDD, ranging from 0.5 V to 0.3 V are demonstrated in this work. In particular, the proposed reference-less inverter-based ICT OTA achieves a differential voltage gain of 50 dB(35 dB) and 17 kHz (0.3 kHz) gain-bandwidth product, G B W, at 0.5 V(0.3 V), while driving 30-pF capacitive load. It shows power consumption ranging from 50 nW at 0.5 V down to only 750 pW at 0.3 V, while occupying 3,250 μ m2I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.


