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EnglishIn this work we demonstrate that He co-implantation can be a powerful tool to control B diffusion in crystalline silicon (c-Si). In particular, the He induced damage leads to the formation of a distribution of nano voids near the surface that locally suppress the amount of self-interstitial s (Is) generated by further B implantation. Thus, B diffusion is reduced and the B implanted profile assumes a box-like shape. In particular, we analyze the microscopic mechanisms leading to the implanted B - nanovoids interaction, demonstrating that the Is injected from the B implanted region annihilate at nanovoids while eroding the nanovoid front layer. By means of a simulation of B diffusion, we will demonstrate that the consequent non-uniform interstitial supersaturalion within the sample determines the peculiar B box-like shape, which is particularly appealing for device fabrication. © 2007 IEEE.
| Titolo: | Effect of He induced nanovoids on B implanted in Si: the microscopic mechanism | |
| Autori interni: | ||
| Data di pubblicazione: | 2007 | |
| Abstract: | In this work we demonstrate that He co-implantation can be a powerful tool to control B diffusion in crystalline silicon (c-Si). In particular, the He induced damage leads to the formation of a distribution of nano voids near the surface that locally suppress the amount of self-interstitial s (Is) generated by further B implantation. Thus, B diffusion is reduced and the B implanted profile assumes a box-like shape. In particular, we analyze the microscopic mechanisms leading to the implanted B - nanovoids interaction, demonstrating that the Is injected from the B implanted region annihilate at nanovoids while eroding the nanovoid front layer. By means of a simulation of B diffusion, we will demonstrate that the consequent non-uniform interstitial supersaturalion within the sample determines the peculiar B box-like shape, which is particularly appealing for device fabrication. © 2007 IEEE. | |
| Handle: | http://hdl.handle.net/20.500.11769/70328 | |
| ISBN: | 1-4244-1227-7 | |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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