In this paper, the low and high field mobilities of graphene on substrates are studied, by means of deterministic solutions, obtained using a Discontinuous Galerkin (DG) numerical scheme, of the semiclassical Boltzmann equation for charge transport in graphene. It is shown that there is a strong dependence on the distance between the impurities and the graphene layer with significant changes both in the low and high field mobility curves. We remark that the use of a DG scheme avoids the intrinsic noise typical of the Direct Monte Carlo Simulation (DSMC) results and allows to evaluate the low field mobility with considerable accuracy, making less ambiguous the comparison with experimental measurements.
|Titolo:||Deterministic solutions of the Boltzmann equation for charge transport in graphene on substrates.|
|Data di pubblicazione:||2016|
|Appare nelle tipologie:||4.1 Contributo in Atti di convegno|