The aim of this work is to experimentally investigate the behavior of SiC power devices connected in parallel subjected to active short circuit events. Devices with spread parameters were tested to evaluate the current sharing during this abnormal operating condition, evaluating their electrothermal stresses and impact on the functionality of the inverter. Experimental tests have been carried out on 750 V, 75A SiC power MOSFETs. Moreover, a characterization of static parameters of SiC devices subjected to multiple active short circuit events has been performed to evaluate power device parametric variations.
Experimental Investigation of Parallel-Connected SiC Power Devices During Active Short Circuit Events
Scimone, Tommaso;Tornello, Luigi Danilo;Scelba, Giacomo;Cacciato, Mario;Sciacca, Angelo Giuseppe;
2025-01-01
Abstract
The aim of this work is to experimentally investigate the behavior of SiC power devices connected in parallel subjected to active short circuit events. Devices with spread parameters were tested to evaluate the current sharing during this abnormal operating condition, evaluating their electrothermal stresses and impact on the functionality of the inverter. Experimental tests have been carried out on 750 V, 75A SiC power MOSFETs. Moreover, a characterization of static parameters of SiC devices subjected to multiple active short circuit events has been performed to evaluate power device parametric variations.File in questo prodotto:
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