The collaboration between ST Microelectronics, INFN, LNS and Catania University gave birth to the design of a monolithic silicon ΔE-E detector telescope in the last years. Using ion implantation techniques, the ΔE stage of that telescope was integrated on the same silicon E detector and an ultra thin ΔE stage (≈1 μm thick) with an excellent charge resolution for low energy (less than 5 MeV) ions was obtained. The positive experience, we got from that already developed silicon monolithic ΔE-E telescope, encouraged us to work on a new generation detector. Our aim is to develop a large area "multidetector" device able to give not only a good charge resolution for low energy ions but also position information. The feasibility of this kind of detector has been verified by 2D simulations carried out by DESSIS ISE(*) device simulator.
Position monolithic silicon detector telescope: Simulation results
Bottiglieri G.;Amorini F.;Cardella G.;Liotta S. F.;Musumarra A.;Rizzo F.;Valvo G.
2004-01-01
Abstract
The collaboration between ST Microelectronics, INFN, LNS and Catania University gave birth to the design of a monolithic silicon ΔE-E detector telescope in the last years. Using ion implantation techniques, the ΔE stage of that telescope was integrated on the same silicon E detector and an ultra thin ΔE stage (≈1 μm thick) with an excellent charge resolution for low energy (less than 5 MeV) ions was obtained. The positive experience, we got from that already developed silicon monolithic ΔE-E telescope, encouraged us to work on a new generation detector. Our aim is to develop a large area "multidetector" device able to give not only a good charge resolution for low energy ions but also position information. The feasibility of this kind of detector has been verified by 2D simulations carried out by DESSIS ISE(*) device simulator.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
