In this paper, an ultra-compact I-V nanometer MOS model, suitable for the analysis of digital circuits, is first proposed. All the main physical effects are included through nine parameters and the model is shown to allow an accurate and quick estimation of DC transfer curves or SRAM noise margins.
Inverter transfer curves and SRAM noise margin evaluation based on an ultra-compact MOS model
GIUSTOLISI, Gianluca;PALUMBO, Gaetano
2011-01-01
Abstract
In this paper, an ultra-compact I-V nanometer MOS model, suitable for the analysis of digital circuits, is first proposed. All the main physical effects are included through nine parameters and the model is shown to allow an accurate and quick estimation of DC transfer curves or SRAM noise margins.File in questo prodotto:
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C044 - Inverter Transfer Curves and SRAM Noise Margin Evaluation Based on an Ultra-Compact MOS Model.pdf
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