Voids-free 3C-SiC/Si interface for high quality epitaxial layer

A study of the carbonization process and of a low temperature buffer layer on the Cubic Silicon Carbide (3C-SiC) epitaxial growth has been reported in this work. From this study the importance of the C/H2 ratio and of the buffer layer process on the voids formation at the 3C-SiC/Si interface has been evidenced. From our study, the influence of the voids the wafer curvature is highlighted. It has been observed that decreasing the density of these voids, decreases the stress of the 3C-SiC film; consequently, the wafer curvature is reduced.