This paper describes a cold-cathode nanoelectronic device that is compact, self-aligned to the vacuum cavity and cost-effective, as manufactured through standard silicon fabrication integrated circuit (IC) processes. Measurements on a first prototyped array of 5x4 diode-connected parallel devices with silicon area of 5umx4um, confirm Fowler-Nordheim emission with turn-on voltage as low as 2 V, while providing a total emission current of 25 A at a gate-cathode bias of 20 V.
2-V Turn-on Voltage Field-Emitting Vacuum Nanoelectronic Device
PENNISI, Salvatore
2016-01-01
Abstract
This paper describes a cold-cathode nanoelectronic device that is compact, self-aligned to the vacuum cavity and cost-effective, as manufactured through standard silicon fabrication integrated circuit (IC) processes. Measurements on a first prototyped array of 5x4 diode-connected parallel devices with silicon area of 5umx4um, confirm Fowler-Nordheim emission with turn-on voltage as low as 2 V, while providing a total emission current of 25 A at a gate-cathode bias of 20 V.File in questo prodotto:
File | Dimensione | Formato | |
---|---|---|---|
07841121-2-V Turn-on Voltage Field-Emitting Vacuum Nanoelectronic Device.pdf
solo gestori archivio
Tipologia:
Versione Editoriale (PDF)
Dimensione
550.48 kB
Formato
Adobe PDF
|
550.48 kB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.