This paper describes a cold-cathode nanoelectronic device that is compact, self-aligned to the vacuum cavity and cost-effective, as manufactured through standard silicon fabrication integrated circuit (IC) processes. Measurements on a first prototyped array of 5x4 diode-connected parallel devices with silicon area of 5umx4um, confirm Fowler-Nordheim emission with turn-on voltage as low as 2 V, while providing a total emission current of 25 A at a gate-cathode bias of 20 V.

2-V Turn-on Voltage Field-Emitting Vacuum Nanoelectronic Device

PENNISI, Salvatore
2016

Abstract

This paper describes a cold-cathode nanoelectronic device that is compact, self-aligned to the vacuum cavity and cost-effective, as manufactured through standard silicon fabrication integrated circuit (IC) processes. Measurements on a first prototyped array of 5x4 diode-connected parallel devices with silicon area of 5umx4um, confirm Fowler-Nordheim emission with turn-on voltage as low as 2 V, while providing a total emission current of 25 A at a gate-cathode bias of 20 V.
978-1-5090-6113-6
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11769/75314
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