This paper describes a cold-cathode nanoelectronic device that is compact, self-aligned to the vacuum cavity and cost-effective, as manufactured through standard silicon fabrication integrated circuit (IC) processes. Measurements on a first prototyped array of 5x4 diode-connected parallel devices with silicon area of 5umx4um, confirm Fowler-Nordheim emission with turn-on voltage as low as 2 V, while providing a total emission current of 25 A at a gate-cathode bias of 20 V.

2-V Turn-on Voltage Field-Emitting Vacuum Nanoelectronic Device

PENNISI, Salvatore
2016-01-01

Abstract

This paper describes a cold-cathode nanoelectronic device that is compact, self-aligned to the vacuum cavity and cost-effective, as manufactured through standard silicon fabrication integrated circuit (IC) processes. Measurements on a first prototyped array of 5x4 diode-connected parallel devices with silicon area of 5umx4um, confirm Fowler-Nordheim emission with turn-on voltage as low as 2 V, while providing a total emission current of 25 A at a gate-cathode bias of 20 V.
2016
978-1-5090-6113-6
File in questo prodotto:
File Dimensione Formato  
07841121-2-V Turn-on Voltage Field-Emitting Vacuum Nanoelectronic Device.pdf

solo gestori archivio

Tipologia: Versione Editoriale (PDF)
Dimensione 550.48 kB
Formato Adobe PDF
550.48 kB Adobe PDF   Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/75314
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 2
  • ???jsp.display-item.citation.isi??? 1
social impact