Deep-Level Transient Spectroscopy and room temperature photoluminescence were used to characterise a 6H-SiC epitaxial layer irradiated with 10 MeV C + and to follow the defect annealing in the temperature range 300-1400 °C. The intensity of luminescence peak at 423 nm, related to band to band transitions, decreases after irradiation and it is slowly recovered after annealing in the temperature range 1000-1400 °C. The DLTS spectra of low temperature annealed samples show the presence of several overlapping traps, which anneal and evolve at high temperatures. After 1200 °C a main level at E c -0.43 eV (E 1 /E 2 ) is detected. The comparison between luminescence and DLTS results indicates that the defect associated with the E 1 /E 2 level is mainly responsible for the luminescence quenching after irradiation.
|Titolo:||Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers|
|Data di pubblicazione:||2005|
|Appare nelle tipologie:||4.1 Contributo in Atti di convegno|