Deep-Level Transient Spectroscopy and room temperature photoluminescence were used to characterise a 6H-SiC epitaxial layer irradiated with 10 MeV C + and to follow the defect annealing in the temperature range 300-1400 °C. The intensity of luminescence peak at 423 nm, related to band to band transitions, decreases after irradiation and it is slowly recovered after annealing in the temperature range 1000-1400 °C. The DLTS spectra of low temperature annealed samples show the presence of several overlapping traps, which anneal and evolve at high temperatures. After 1200 °C a main level at E c -0.43 eV (E 1 /E 2 ) is detected. The comparison between luminescence and DLTS results indicates that the defect associated with the E 1 /E 2 level is mainly responsible for the luminescence quenching after irradiation.

Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers

ZIMBONE, MASSIMO;REITANO, Riccardo;CALCAGNO, Lucia
2005-01-01

Abstract

Deep-Level Transient Spectroscopy and room temperature photoluminescence were used to characterise a 6H-SiC epitaxial layer irradiated with 10 MeV C + and to follow the defect annealing in the temperature range 300-1400 °C. The intensity of luminescence peak at 423 nm, related to band to band transitions, decreases after irradiation and it is slowly recovered after annealing in the temperature range 1000-1400 °C. The DLTS spectra of low temperature annealed samples show the presence of several overlapping traps, which anneal and evolve at high temperatures. After 1200 °C a main level at E c -0.43 eV (E 1 /E 2 ) is detected. The comparison between luminescence and DLTS results indicates that the defect associated with the E 1 /E 2 level is mainly responsible for the luminescence quenching after irradiation.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/7901
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