A new monolithic emitter-switching bipolar transistor (ESBT) having a good switching behavior, along with a highly performing on-state conduction characteristic, is reported. The device is the cascode connection of a high voltage bipolar transistor and a fast-switching low-voltage power MOSFET, realized inside the BJT part. The structure, which is based on a monolithic technology, has been experimentally analyzed to derive several results, particularly dwelling upon the on-state conduction characteristic and the storage time behavior of the presented device.
A New Monolithic Power Actuator Devoted to High Voltage and High Frequency Applications
RACITI, Angelo;
2004-01-01
Abstract
A new monolithic emitter-switching bipolar transistor (ESBT) having a good switching behavior, along with a highly performing on-state conduction characteristic, is reported. The device is the cascode connection of a high voltage bipolar transistor and a fast-switching low-voltage power MOSFET, realized inside the BJT part. The structure, which is based on a monolithic technology, has been experimentally analyzed to derive several results, particularly dwelling upon the on-state conduction characteristic and the storage time behavior of the presented device.File in questo prodotto:
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