The results of a new epitaxial process using an industrial 6x2" wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H-2>0.05) and an increase of the growth rate until about 20 um/h has been measured. No difference has been observed in terms of defects, doping uniformity (average maximum variation 8%) and thickness uniformity (average maximum variation 1.2%) with respect to the standard process without HCl.
Titolo: | New achievements on CVD based methods for SIC epitaxial growth |
Autori interni: | |
Data di pubblicazione: | 2005 |
Rivista: | |
Handle: | http://hdl.handle.net/20.500.11769/83963 |
ISBN: | 0-87849-963-6 |
Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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