The results of a new epitaxial process using an industrial 6x2" wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H-2>0.05) and an increase of the growth rate until about 20 um/h has been measured. No difference has been observed in terms of defects, doping uniformity (average maximum variation 8%) and thickness uniformity (average maximum variation 1.2%) with respect to the standard process without HCl.
|Titolo:||New achievements on CVD based methods for SIC epitaxial growth|
|Data di pubblicazione:||2005|
|Appare nelle tipologie:||4.1 Contributo in Atti di convegno|