The doping profile optimization in semiconductor has been tackled as a constrained optimization problem coupled with a drift-diffusion model to simulat. The physical phenomenon. A new population-based algorithm. The Constrained Immunological Algorithm, has been introduced an. The experimental results confirm that clearly outperforms previous state-of-theart algorithms in doping profile optimization. Supplementary Materials: more numerical results are available at http://www.dmi.unict.it/~stracquadanio/semiconductors.html.
Doping profile optimization in semiconductor design
ROMANO, Vittorio;NICOSIA, GIUSEPPE
2009-01-01
Abstract
The doping profile optimization in semiconductor has been tackled as a constrained optimization problem coupled with a drift-diffusion model to simulat. The physical phenomenon. A new population-based algorithm. The Constrained Immunological Algorithm, has been introduced an. The experimental results confirm that clearly outperforms previous state-of-theart algorithms in doping profile optimization. Supplementary Materials: more numerical results are available at http://www.dmi.unict.it/~stracquadanio/semiconductors.html.File in questo prodotto:
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